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 InSb Hall Element
HW-108A
*High-sensitivity InSb Hall element. *Super mini-mold SMT package (fits SOT343 land pattern). *Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems.
*Absolute Maximum Ratings
Item Symbol Limit Unit
Max. Input Current
Ic
Const. Current Drive
20
mA
Operating Temp. Range
Topr.
-40 to +110
C
Storage Temp. Range
Tstg.
-40 to +125
C
*Classification of Output Hall Voltage (VH)
Rank VH [ mV ] 122 144 168 196 228 266 to to to to to to 150 174 204 236 274 320 B=50mT, Vc=IV Constant Voltage Drive Conditions
*Electrical Characteristics(Ta=25C)
Item Symbol Conditions Min. Typ. Max. Unit
A B C
Output Hall Voltage
VH
Const. Voltage Drive
B=50mT, Vc=IV B=0mT, Ic=0.1mA B=0mT, Ic=0.1mA B=0mT, Vc=IV
122
320
mV
D E
Input Resistance Output Resistance Offset Voltage
Rin Rout Vos
250 250 -7
450 450
F
Note : When ordering, specify 3-rank or wider range(e*g*,BCD).
*Input Current Derating Curve
+7 mV
Input Resistance
Temp. Coefficient of VH VH B=50mT, Ic=5mA
20
-1.8 %/C Input Current(mA)
Rin : 250 to 450
Temp. Coefficient of Rin
Rin
B=0mT, Ic=0.1mA
-1.8
%/C
10
Dielectric Strength
100V D.C
1.0
M
Notes : 1. VH = VHM - Vos (VHM:meter indication)
1 -V 2. VH = VH (T1) X VH (T3) - T H) (T2) X 100 (T3 2 1 -R 3. Rin = Rin (T1) X Rin (T3) - T in (T2) X 100 (T )
3 2
T1 = 20C, T2 = 0C, T3 = 40C
0 -60
-40
- 20
0
20
40
60
80
100
120
Ambient Temperature.(C) Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range.
0.25
*Dimensional Drawing (mm)
2.10.1 0.4 1.3 0.4 0.3
*Input Voltage Derating Curve
Input Resistance 2.0
Input Voltage(V) Rin : 250 to 450
2
2.10.2 1.250.1
1
0 to 0.1
N
5 5
3
4
0.1
1.0
5
0.8 0
+0.1
Pinning
5
0 -60
3 4 () ()
-40
- 20
0
20
40
60
80
100
120
Input Output
1() 2()
Ambient Temperature.(C) Note : For constant-voltage drive, stay within this input voltage derating curve envelope.
19
HW-108A
a
*Characteristic Curves
Rin-T
2000 1800
Input Resistance:Rin( ) Output Voltage:VH(mV)
VH-B
600.0 500.0 400.0 300.0 Vin 200.0 100.0 0.0 0
Ic const Vc const Ic = 5 (mA) Vc = 1 (V) Ta = 25 (C)
1600 1400 1200 1000 800 600 400 200 0 -50 0 50
Ambient Temperature(C)
Ic
c
100
150
10
20
30
40
50
Magnetic Flux Density B (mT)
VH-T
2000 1750
Output Voltage:VH(mV) Ic const Vc const
VH-Vc, VH-Ic
1200 1000 800 600 400 200 0 0.0 5 0.5 10 1.0
Ic (mA) Input Current Vc (V) Input Voltage Ic const Vc const B = 50 (mT) Ta = 25 (C)
Ic
1500 1250 1000 750 500 250 0 -50 Vin Ic
Ic = 5 (mA) Vc = 1 (V) B = 50 (mT)
Output Voltage:VH(mV)
Vin
g
15 1.5 20 Ic:(mA) 2.0 Vc:(V)
0
50
Ambient Temperature(C)
100
150
VOS-T
40
Ic const Vc const
VOS-Vc, VOS-Ic
20 18
Offset Voltage:Vos(mV) Ic const Vc const B = 0 (mT) Ta = 25 (C)
Offset Voltage:Vos(mV)
30 Ic 20
Ic = 5 (mA) Vc = 1 (V) B = 0 (mT)
16 14 12 10 8 6 4 2
Ic
i
Vin
10 Vin 0 -50
0
50
Ambient Temperature(C)
100
150
0 0.0
5 0.5
10 1.0
Ic (mA) Input Current Vc (V) Input Voltage
15 1.5
20 Ic:(mA) 2.0 Vc:(V)
*Magnetic Flux Density 1(mT)=10(G)
In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V)
20


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